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| BU326A HIGH VOLTAGE NPN SILICON POWER TRANSISTOR s s s SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR FAST SWITCHING SPEED APPLICATIONS: POWER SUPPLIES s LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT s 1 2 DESCRIPTION The BU326A is a silicon multiepitaxial mesa NPN transistor in Jedec TO-3 metal case particularly intended for switch-mode CTV supply system. TO-3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEO V EBO IC I CM IB P tot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Current Total Power Dissipation at T case 25 o C Storage Temperature Max. Operating Junction Temperature Value 900 400 10 6 8 3 75 -65 to 200 200 Unit V V V A A A W o o C C June 1997 1/4 BU326A THERMAL DATA R thj-case Thermal Resistance Junction-case Max 2.33 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CES I EBO Parameter Collector Cut-off Current (V BE = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CE = 900 V V CE = 900 V V EB = 10 V 400 I B = 0.5 A IB = 1.25 A I B = 0.5 A I B = 1.25 A V CE = 5 V I B1 = 0.5 A I B1 = 0.5 A V CC = 250 V I B1 = 0.5 A V CC = 250 V 25 0.5 s 1.5 3 1.4 1.6 T c = 125 C o Min. Typ. Max. 1 2 10 Unit mA mA mA V V V V I C = 100 mA V CEO(sus) Collector-Emitter Sustaining Voltage(I B = 0) V CE(sat) V BE(sat) h FE t on ts tf Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Turn-on Time Storage Time Fall Time I C = 2.5 A IC = 4 A I C = 2.5 A IC = 4 A IC = 1 A I C = 2.5 A V CC = 250 V I C = 2.5 A I B2 = -1A A I C = 2.5 A I B2 = -1A A 3.5 0.5 s s Pulsed: Pulse duration = 300 s, duty cycle 1.5 % 2/4 BU326A TO-3 MECHANICAL DATA mm MIN. A B C D E G N P R U V 11.00 0.97 1.50 8.32 19.00 10.70 16.50 25.00 4.00 38.50 30.00 TYP. MAX. 13.10 1.15 1.65 8.92 20.00 11.10 17.20 26.00 4.09 39.30 30.30 MIN. 0.433 0.038 0.059 0.327 0.748 0.421 0.649 0.984 0.157 1.515 1.187 inch TYP. MAX. 0.516 0.045 0.065 0.351 0.787 0.437 0.677 1.023 0.161 1.547 1.193 DIM. P G A D C U V O N R B P003F 3/4 E BU326A Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 4/4 |
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